Name
Title | ||
|---|---|---|
A 3.3-V, 4-Mb nonvolatile ferroelectric RAM with selectively driven double-pulsed plate read/write-back scheme |
Abstract | ||
|---|---|---|
This paper presents, for the first time, a 4-Mb ferroelectric random access memory, which has been designed and fabricated with 0.6-/spl mu/m ferroelectric storage cell integrated CMOS technology. In order to achieve a stable cell operation, novel design techniques robust to unstable cell capacitors are proposed: (1) double-pulsed plate read/write-back scheme; (2) complementary data preset referen... |
Year | DOI | Venue |
|---|---|---|
2000 | 10.1109/4.841494 | IEEE Journal of Solid-State Circuits |
Keywords | DocType | Volume |
Random access memory,Ferroelectric films,Nonvolatile memory,Ferroelectric materials,CMOS technology,Integrated circuit technology,Robustness,Capacitors,Fatigue,Voltage | Journal | 35 |
Issue | ISSN | Citations |
5 | 0018-9200 | 4 |
PageRank | References | Authors |
1.80 | 2 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yeonbae Chung | 1 | 18 | 4.66 |
| Byung-Gil Jeon | 2 | 22 | 5.40 |
| Kang-Deog Suh | 3 | 56 | 22.19 |