Name
Abstract | ||
|---|---|---|
Previously we have shown that image sensors are continuously subject to the development of in-field permanent defects in the form of hot pixels. Based on laboratory measurements of defect rates in 21 DSLRs and 10 cell phone cameras, we show in this paper that the rate of these defects depends on the technology (APS or CCD) and on design parameters the like of imager area, pixel size, and gain (ISO). Comparing different sensor sizes has shown that the defect rate does not scale linearly. Comparing different pixel sizes has demonstrated that defect rates grow rapidly as pixel area shrinks. Finally, increasing the image sensitivity (ISO) causes the defects to be more noticeable, thus increasing the defect rate. These defect rate trends result in interesting tradeoffs in imager design, allowing the designer to determine the specific imager parameters based on the imager’s designated function and reliability requirements. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1109/DFT.2010.35 | DFT |
Keywords | Field | DocType |
CCD image sensors,appearance potential spectroscopy,laboratory techniques,reliability,APS,CCD,DSLR,cell phone cameras,image sensors,imager design,imager parameters,laboratory measurements,pixel defect rates,reliability requirements,APS,CCD,CMOS image sensor,active pixel sensor,defect detection,hot pixel,imager defects,imager design tradeoffs | Iso standards,Computer vision,Image sensor,Computer science,CMOS sensor,Electronic engineering,Pixel,Artificial intelligence,Calibration | Conference |
ISSN | Citations | PageRank |
1550-5774 | 6 | 0.99 |
References | Authors | |
3 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Glenn H. Chapman | 1 | 167 | 34.10 |
| Jenny Leung | 2 | 33 | 6.59 |
| Israel Koren | 3 | 1579 | 175.07 |
| Zahava Koren | 4 | 239 | 36.02 |