Paper Info
Title
Logic circuit design using monostable-bistable transition logic element based on standard BiCMOS process
Abstract
We present a monostable-bistable transition logic element (MOBILE) based on the negative-differential-resistance (NDR) circuit. In particular, this circuit can be completely implemented using the standard BiCMOS process. A traditional MOBILE using two resonant tunneling diodes (RTD) connected in series is a functional logic circuit. The fabrication of RTD is utilized in the complicated molecular-beam-epitaxy (MBE) system. However, we present a MOBILE circuit that is completely made of standard Si-based metal-oxide-semiconductor field effect transistors and SiGe-based heterojunction bipolar transistors. By suitably determining the control voltages and input conditions, we can obtain the operation of the inverter, AND and OR logic gates. We also demonstrate the latch characteristic of this MOBILE circuit. This logic circuit is fabricated using the standard 0.35@mm BiCMOS process without the need for the MBE system.
Year
DOI
Venue
2011
10.1016/j.mejo.2010.10.016
Microelectronics Journal
Keywords
Field
DocType
mbe system,monostable-bistable transition logic element,standard bicmos process,standard si-based metal-oxide-semiconductor field,logic circuit,traditional mobile,mm bicmos process,logic gate,mobile,latch,functional logic circuit,logic circuit design,negative differential resistance circuit,mobile circuit,bicmos process,heterojunction bipolar transistor,resonant tunneling diode,molecular beam epitaxy,circuit design
Discrete circuit,Logic gate,Pass transistor logic,Emitter-coupled logic,Circuit design,Electronic engineering,Resistor–transistor logic,Logic family,Engineering,Electronic circuit,Electrical engineering
Journal
Volume
Issue
ISSN
42
2
Microelectronics Journal
Citations 
PageRank 
References 
2
0.43
3
Authors
4
Name
Order
Citations
PageRank
Kwang-jow Gan1105.16
Cher-Shiung Tsai293.75
Yu-Kuang Li320.43
Jeng-Jong Lu420.43