Name
Abstract | ||
|---|---|---|
This paper describes a programmable high speed multi-level simultaneous bidirectional I/O. With programmable high speed differential current switching, the static current flow becomes dependent upon the number of bits in the outgoing data, from 0-bit to 2-bit. The pre-emphasis method was implemented to enhance the transmission speed. Simulation results based on 0.18mum CMOS process show the maximum data rate can be enhanced to 4.8Gb/s/pin. Timing window and voltage window are 480ps and 43mV, respectively |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1109/ISQED.2007.128 | ISQED |
Keywords | Field | DocType |
cmos process,cmos integrated circuits,current switching,outgoing data,programmable high speed differential,programmable high speed,480 ps,static current flow,simultaneous bidirectional i/o,programmable high speed differential current switching,high-speed integrated circuits,maximum data rate,m cmos process,43 mv,transmission speed,programmable high speed multi-level,voltage window,programmable circuits,timing window,static current,0.18 micron,transmission lines,decoding,impedance matching,noise reduction,frequency,voltage,circuits | Programmable circuits,Computer science,Voltage,Cmos process,Electronic engineering,CMOS,Input/output,Data rate | Conference |
ISBN | Citations | PageRank |
0-7695-2795-7 | 1 | 0.41 |
References | Authors | |
3 | 2 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yong Sin Kim | 1 | 19 | 5.45 |
| Sung-Mo Steve Kang | 2 | 1198 | 213.14 |