Abstract | ||
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We propose a methodology using nodal analysis techniques compatible with existing computer-aided design (CAD) tools for implementing critical threshold design rules for electromigration reliability. The concept underlying critical threshold design rules is the observation that a mechanical stress-induced backflow of metal atoms is created by electromigration in interconnect lines confined by a rigid dielectric. If the steady-state balance of these two atomic fluxes is achieved before critical electromigration damage is realized, then the line can be considered to be virtually immortal with negligible reliability risk. A design rule based on this critical threshold criterion has the potential to give designers added flexibility to use currents larger than present design rules typically allow in short interconnects |
Year | DOI | Venue |
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1999 | 10.1109/43.759073 | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems |
Keywords | DocType | Volume |
electromigration,integrated circuit design,integrated circuit interconnections,integrated circuit reliability,atomic flux,computer-aided design,critical threshold design rule,electromigration reliability,interconnect line,mechanical stress,nodal analysis,rigid dielectric | Journal | 18 |
Issue | ISSN | Citations |
5 | 0278-0070 | 6 |
PageRank | References | Authors |
0.78 | 4 | 4 |
Name | Order | Citations | PageRank |
---|---|---|---|
J. J. Clement | 1 | 6 | 0.78 |
S. P. Riege | 2 | 6 | 1.12 |
R. Cvijetic | 3 | 6 | 0.78 |
Thompson, Carl V. | 4 | 50 | 11.56 |