Title
Methodology for electromigration critical threshold design rule evaluation
Abstract
We propose a methodology using nodal analysis techniques compatible with existing computer-aided design (CAD) tools for implementing critical threshold design rules for electromigration reliability. The concept underlying critical threshold design rules is the observation that a mechanical stress-induced backflow of metal atoms is created by electromigration in interconnect lines confined by a rigid dielectric. If the steady-state balance of these two atomic fluxes is achieved before critical electromigration damage is realized, then the line can be considered to be virtually immortal with negligible reliability risk. A design rule based on this critical threshold criterion has the potential to give designers added flexibility to use currents larger than present design rules typically allow in short interconnects
Year
DOI
Venue
1999
10.1109/43.759073
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Keywords
DocType
Volume
electromigration,integrated circuit design,integrated circuit interconnections,integrated circuit reliability,atomic flux,computer-aided design,critical threshold design rule,electromigration reliability,interconnect line,mechanical stress,nodal analysis,rigid dielectric
Journal
18
Issue
ISSN
Citations 
5
0278-0070
6
PageRank 
References 
Authors
0.78
4
4
Name
Order
Citations
PageRank
J. J. Clement160.78
S. P. Riege261.12
R. Cvijetic360.78
Thompson, Carl V.45011.56