Thompson, Carl V. - Citegraph

Author Info

Name	Affiliation	Papers
THOMPSON, CARL V.	MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA	11
Collaborators	Citations	PageRank
21	50	11.56
Referers	Referees	References
130	59	26

Search Limit

100130

Publications (11 rows)

Collaborators (21 rows)

Referers (100 rows)

Referees (59 rows)

Title	Citations	PageRank	Year
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors.	0	0.34	2018
Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation.	1	0.43	2017
Characterisation of defects generated during constant current InGaN-on-silicon LED operation.	0	0.34	2017
Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation.	0	0.34	2016
Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing	2	0.80	2015
Reliability computer-aided design tool for full-chip electromigration analysis and comparison with different interconnect metallizations	7	0.81	2007
Electromigration Reliability Comparison of Cu and Al Interconnects	7	1.21	2005
Thermal aware cell-based full-chip electromigration reliability analysis	3	0.67	2005
Circuit Level Reliability Analysis of Cu Interconnects	16	1.54	2004
A comprehensive layout methodology and layout-specific circuit analyses for three-dimensional integrated circuits	8	4.31	2002
Methodology for electromigration critical threshold design rule evaluation	6	0.78	1999

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