Title
A 25 Gb/s × 4-channel 74 mW/ch transimpedance amplifier in 65 nm CMOS
Abstract
A 25 Gb/s × 4-channel transimpedance amplifier has been realized in 65-nm CMOS technology. It achieves transimpedance gain of 69.8 dBΩ, bandwidth of 22.8 GHz, and gains flatness of under ±2 dB after equalizing the effect of transmission loss, incorporating gain-stage amplifier with flat frequency response, and 50Ω-output driver with an analogue equalizer. The proposed TIA dissipates only 74 mW/ch and demonstrates the transimpedance bandwidth products per DC power of 952.1 GHzΩ/mW and crosstalk of less than -17 dB. The sensitivity at bit error rate (BER) of less than 10-12 was measured to be the optical input power of -7.4 dBm for multi-channel operation at the data rate of 25 Gb/s, and also demonstrates only 0.8 dB power penalty.
Year
DOI
Venue
2010
10.1109/CICC.2010.5617420
CICC
Keywords
Field
DocType
cmos analogue integrated circuits,sensitivity,analogue equalizer,bit error rate,transimpedance gain,gain-stage amplifier,size 65 nm,frequency response,channel transimpedance amplifier,operational amplifiers,transmission loss,crosstalk,cmos technology,multichannel operation,dc power,bit rate 25 gbit/s,error statistics,bandwidth 22.8 ghz,flat frequency response,output driver,transimpedance amplifier,gain,cmos integrated circuits,bandwidth
Frequency response,Transmission loss,Computer science,CMOS,Electronic engineering,Bandwidth (signal processing),Transimpedance amplifier,Electrical engineering,Operational amplifier,Amplifier,Bit error rate
Conference
ISSN
ISBN
Citations 
0886-5930
978-1-4244-5758-8
0
PageRank 
References 
Authors
0.34
0
6
Name
Order
Citations
PageRank
Takashi Takemoto19919.11
Fumio Yuki26410.51
Hiroki Yamashita38314.48
Shinji Tsuji45441.19
Tatsuya Saito5385.32
Shinji Nishimura6315.94