Name
Abstract | ||
|---|---|---|
Precise determination of transistor electrical parameters is essential for accurate circuit simulation. The strong geometric dependences of MOS transistor electrical parameters can be modeled by the inverse-geometry formula. However, special care is needed in using the inverse-geometry formula. To prevent the short-channel and narrow-width effects being adversely mirrored to the drain-current evaluation of large transistors, we propose to clamp the dependences of transistor electrical parameters on small-geometry effects at a boundary (L CLP, W CLP). In principle three transistors with two different channel lengths and two different channel widths are required to extract the geometric dependence of various electric parameters. Our analysis shows that a set of five test transistors can increase the extraction accuracy by a factor of two, and thus is a better choice when both the modeling accuracy and test clip complexity are considered. |
Year | DOI | Venue |
|---|---|---|
1987 | 10.1109/TCAD.1987.1270305 | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems |
DocType | Volume | Issue |
Journal | 6 | 4 |
ISSN | Citations | PageRank |
0278-0070 | 5 | 1.24 |
References | Authors | |
0 | 2 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. C. Hsu | 1 | 5 | 1.24 |
| B. J. Sheu | 2 | 129 | 28.40 |