Name
Title | ||
|---|---|---|
Utilising the normal distribution of the write noise margin to easily predict the SRAM write yield. |
Abstract | ||
|---|---|---|
This study describes a method to easily predict the write yield of a static random access memory (SRAM) memory cell. The differential coefficient of the combined word line margin (CWLM) for the threshold voltage (Vth) is analysed using the simple Schockley's transistor model. The analysis shows the good linearity comes from keeping the access transistor operating in the saturation mode for a wide ... |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1049/iet-cds.2012.0090 | IET Circuits, Devices & Systems |
Keywords | Field | DocType |
failure analysis,Monte Carlo methods,normal distribution,probability,semiconductor device reliability,SPICE,SRAM chips | Normal distribution,Monte Carlo method,Transistor model,Spice,Linearity,Static random-access memory,Electronic engineering,Differential coefficient,Noise margin,Mathematics | Journal |
Volume | Issue | ISSN |
6 | 4 | 1751-858X |
Citations | PageRank | References |
0 | 0.34 | 5 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hiroshi Makino | 1 | 45 | 5.83 |
| Shunji Nakata | 2 | 66 | 13.07 |
| Hirotsugu Suzuki | 3 | 24 | 1.97 |
| Shin'ichiro Mutoh | 4 | 64 | 7.01 |
| Masayuki Miyama | 5 | 98 | 20.67 |
| Tsutomu Yoshimura | 6 | 15 | 1.59 |
| Shuhei Iwade | 7 | 20 | 2.76 |
| Yoshio Matsuda | 8 | 62 | 11.85 |