Name
Abstract | ||
|---|---|---|
A wide range of application has made high-voltage (HV) MOSFETs evolve into application-specific structures. Trench-gate type HV-MOSFET is one of them; its user application space tends to fall on a larger power consumption domain, compared with planar HV-MOSFET. As for planar HV-MOSFETs, regardless of DDMOS or LDMOS, HiSIM_HV has begun to serve design community as a world recognized model. In this work, the benefit of HiSIM_HV would be extended to another class of HV device, i.e., trench-gate type HV-MOSFET, while the framework of the HiSIM_HV model formulation is kept intact as much as possible. The modified code successfully can play back TCAD-generated measurement data. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1587/transele.E96.C.744 | NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL |
Keywords | Field | DocType |
high-voltage MOSFET,LDMOS,HiSIM,trench-gate MOSFET | Trench gate,LDMOS,Electronic engineering,Engineering,High voltage mosfet | Journal |
Volume | Issue | ISSN |
96-C | 5 | 1745-1353 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Takahiro Iizuka | 1 | 2 | 3.79 |
| Kenji Fukushima | 2 | 0 | 0.34 |
| Akihiro Tanaka | 3 | 0 | 0.68 |
| Hideyuki Kikuchihara | 4 | 7 | 2.85 |
| Masataka Miyake | 5 | 3 | 3.07 |
| Hans Jürgen Mattausch | 6 | 96 | 32.93 |
| Mitiko Miura-Mattausch | 7 | 11 | 16.18 |