Name
Title | ||
|---|---|---|
Electrical analysis of DRAM cell transistors for the root-cause addressing of the tRDL time-delay failure |
Abstract | ||
|---|---|---|
Electrical analysis of the DRAM cell transistors to find the root cause of the t(RDL) time-delay failure was carried out. The t(RDL) failure which is a critical yield-determining failure mode of scaled DRAMs was found to be caused by the high lightly doped drain (LDD) resistance of the cell transistors. A new forward biased drain current measurement with gate turn-on, charge pumping technique, and impact ionization induced substrate current measurement were used to trace the dominant resistance cause for the t(RDL) failure, and their analysis results were discussed. (C) 2003 Elsevier Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1016/S0026-2714(03)00259-2 | Microelectronics Reliability |
Field | DocType | Volume |
Dram,Electrical analysis,Electronic engineering,Engineering,Transistor,Root cause,Electrical engineering,Reliability engineering | Journal | 43 |
Issue | ISSN | Citations |
9 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Young Pil Kim | 1 | 0 | 0.68 |
| Uin Chung | 2 | 1 | 0.78 |
| Joo Tae Moon | 3 | 0 | 0.68 |
| Sang U. Kim | 4 | 0 | 0.68 |