Title
Angle-resolved photoelectron spectroscopy on gate insulators
Abstract
This work reviews the study of the chemical composition and the chemical structure of ultrathin oxynitride films using angle-resolved photoelectron spectroscopy. The nearest and the second nearest neighbors of a nitrogen atom in oxynitride films were determined from the deconvolution of N 1s spectra. It was found by applying maximum entropy concept to the angle resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by the plasma nitridation is quite different from those in oxynitride films formed by the interface nitridation.
Year
DOI
Venue
2007
10.1016/j.microrel.2006.03.003
Microelectronics Reliability
Keywords
Field
DocType
nitrogen,chemical composition,photoelectron spectroscopy,maximum entropy,chemical structure,nearest neighbor
Extrinsic semiconductor,Analytical chemistry,Dielectric,Nitriding,Atom,Chemistry,Spectral line,Gate oxide,Plasma,X-ray photoelectron spectroscopy
Journal
Volume
Issue
ISSN
47
1
0026-2714
Citations 
PageRank 
References 
0
0.34
2
Authors
6
Name
Order
Citations
PageRank
T. Hattori100.34
H. Nohira200.68
S. Shinagawa300.34
Muneo Hori47219.93
M. Kase500.34
T. Maruizumi600.34