Name
Title | ||
|---|---|---|
Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer. |
Year | Venue | DocType |
|---|---|---|
2012 | Microelectronics Reliability | Journal |
Volume | Issue | Citations |
52 | 4 | 0 |
PageRank | References | Authors |
0.34 | 0 | 9 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| C. Dou | 1 | 1 | 0.77 |
| Kuniyuki Kakushima | 2 | 9 | 11.63 |
| Parhat Ahmet | 3 | 3 | 4.13 |
| Kazuo Tsutsui | 4 | 6 | 9.26 |
| A. Nishiyama | 5 | 0 | 0.68 |
| Nobuyuki Sugii | 6 | 4 | 5.26 |
| Kenji Natori | 7 | 167 | 13.29 |
| Takeo Hattori | 8 | 1 | 1.98 |
| Hiroshi Iwai | 9 | 12 | 12.99 |