| Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes. | 0 | 0.34 | 2016 |
| Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes. | 2 | 0.77 | 2015 |
| Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. | 1 | 0.48 | 2015 |
| A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. | 0 | 0.34 | 2014 |
| Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. | 0 | 0.34 | 2014 |
| Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer. | 0 | 0.34 | 2012 |
| Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors. | 0 | 0.34 | 2012 |
| Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise | 0 | 0.34 | 2011 |
| Advantage of further scaling in gate dielectrics below 0.5nm of equivalent oxide thickness with La2O3 gate dielectrics | 0 | 0.34 | 2010 |
| SrO capping effect for La2O3/Ce-silicate gate dielectrics | 0 | 0.34 | 2010 |
| Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack | 0 | 0.34 | 2008 |
| Carrier Separation And Vth Measurements Of W-La2o3 Gated Mosfet Structures After Electrical Stress | 0 | 0.34 | 2007 |
| Effective Mobility And Interface-State Density Of La2o3 Nmisfets After Post Deposition Annealing | 1 | 0.63 | 2006 |
