Name
Abstract | ||
|---|---|---|
We propose a new cone-type DRAM cell as a 1T DRAM cell. The superiority of cone shape is already reported, in that the electric field concentration effect encourages impact ionization phenomenon. So the device has improved DRAM characteristics compared with cylinder type 1T DRAM Cell (SGVC Cell). To confirm the memory operation of the cone-type DRAM cell, simulation works were carried out. Also, retention characteristic shows the device can be used practically. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1587/transele.E94.C.681 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
1T DRAM, cone, electric field concentration | Dram,Dynamic random-access memory,Impact ionization,Electronic engineering,Non-volatile memory,Engineering,Integrated circuit | Journal |
Volume | Issue | ISSN |
E94C | 5 | 1745-1353 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Gil Sung Lee | 1 | 0 | 1.35 |
| Doo-Hyun Kim | 2 | 155 | 33.21 |
| Seongjae Cho | 3 | 6 | 7.70 |
| Byung-Gook Park | 4 | 7 | 14.38 |