Title
Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches By Selective Area Movpe
Abstract
We achieved first dynamic all-optical signal processing with a bandgap-engineered MZI SOA all-optical switch. The wide-gap Selective Area Growth (SAG) technique was used to provide multi-bandgap materials with a single step epitaxy. The maximum photoluminescence (PL) peak shift obtained between the active region and the passive region was 192nm. The static current switching with the fabricated switch indicated a large carrier induced refractive index change; up to 14 pi phase shift was obtained with 60 mA injection in the SOA. The carrier recovery time of the SOA for obtaining a phase shift of pi was estimated to be 250-300 ps. A clear eye pattern was obtained in 2.5 Gbps all-optical wavelength conversion. This is the first all-optical wavelength conversion demonstration with a bandgap-engineered PIC with either selective area growth or quantum-well intermixing techniques.
Year
DOI
Venue
2006
10.1093/ietele/e89-c.7.1068
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
selective area growth, metal-organic vapor phase epitaxy, monolithic integration, photonic integrated circuits, all-optical switch, Mach-Zehnder interferometer, semiconductor optical amplifier, wavelength conversion
Optical amplifier,Mach–Zehnder interferometer,Optical switch,Eye pattern,Carrier recovery,Optics,Electronic engineering,Metalorganic vapour phase epitaxy,Photonic integrated circuit,Engineering,Refractive index
Journal
Volume
Issue
ISSN
E89C
7
0916-8524
Citations 
PageRank 
References 
0
0.34
0
Authors
5
Name
Order
Citations
PageRank
Xueliang Song100.68
Naoki Futakuchi200.34
Daisuke Miyashita3729.99
Foo Cheong Yit400.34
Yoshiaki Nakano5916.16