Name
Title | ||
|---|---|---|
A unified submicrometer MOS transistor charge/capacitance model for mixed-signal IC's |
Abstract | ||
|---|---|---|
A unified modeling approach for the submicrometer MOS transistor charge/capacitance characteristics in all operation regions is presented. Development of this MOS charge model is based on the charge-density approximation to reduce the complexity of the analytical expression. To model the charge density more accurately, the conductance-degradation coefficient is determined by the derivative of drai... |
Year | DOI | Venue |
|---|---|---|
1999 | 10.1109/4.736662 | IEEE Journal of Solid-State Circuits |
Keywords | DocType | Volume |
MOSFETs,Capacitance,Integrated circuit modeling,CMOS technology,Integrated circuit technology,Semiconductor device modeling,Linear approximation,Threshold voltage,Capacitance-voltage characteristics,Interpolation | Journal | 34 |
Issue | ISSN | Citations |
1 | 0018-9200 | 2 |
PageRank | References | Authors |
0.91 | 4 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| S. H. Jen | 1 | 2 | 1.93 |
| B. J. Sheu | 2 | 129 | 28.40 |
| Yoondong Park | 3 | 14 | 4.16 |