Title | ||
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Modeling and design analysis of 3D vertical resistive memory — A low cost cross-point architecture |
Abstract | ||
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Resistive Random Access Memory (ReRAM) is one of the most promising emerging non-volatile memory (NVM) candidates due to its fast read/write speed, excellent scalability and low-power operation. Recently proposed 3D vertical cross-point ReRAM (3D-VRAM) architecture attracts a lot of attention because it offers a cost-competitive solution as NAND Flash replacement. In this work, we first develop an array-level model which includes the geometries and properties of all the components in the 3D structure. The model is capable of analyzing the read/write noise margin of a 3D-VRAM array in the presence of the sneak leakage current and voltage drop. Then we build a system-level design tool that is able to explore the design space with specified constraints and find the optimal design points with different targets. We also study the impact of different design parameters on the array size, bit density, and overall cost-per-bit. Compared to the state-of-the-art 3D horizontal ReRAM (3D-HRAM), the 3D-VRAM shows great cost advantage when stacking more than 16 layers. |
Year | DOI | Venue |
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2014 | 10.1109/ASPDAC.2014.6742992 | ASP-DAC |
Keywords | Field | DocType |
3d vertical cross-point reram,low-power operation,read-write speed,design space,3d-vram architecture,integrated circuit modelling,random-access storage,nand flash replacement,3d horizontal reram,voltage drop,3d-hram,array size,nvm,resistive random access memory,nonvolatile memory,bit density,scalability,system-level design tool,integrated circuit design,3d vertical resistive memory,design analysis,array-level model,optimal design point,read-write noise margin,low-cost cross-point architecture,sneak leakage current,3d-vram array | Computer science,Voltage drop,Design tool,Electronic engineering,Optimal design,NAND gate,Integrated circuit design,Noise margin,Resistive random-access memory,Scalability | Conference |
ISSN | Citations | PageRank |
2153-6961 | 8 | 0.58 |
References | Authors | |
6 | 4 |
Name | Order | Citations | PageRank |
---|---|---|---|
Cong Xu | 1 | 1154 | 48.25 |
Dimin Niu | 2 | 609 | 31.36 |
Shimeng Yu | 3 | 490 | 56.22 |
Yuan Xie | 4 | 6430 | 407.00 |