Name
Abstract | ||
|---|---|---|
Many macroscopic aspects of electromigration damage in thin metal films have been investigated by means of Monte Carlo simulations based on simplified physical model. The employed model, can be described as a middle-scale model, in which the physical system is modeled with a high level of abstraction, without a detailed atomic physical model of the system. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1016/j.microrel.2008.03.018 | Microelectronics Reliability |
Keywords | Field | DocType |
physical model,mean time to failure,electromigration,lognormal distribution,monte carlo simulation | Mean time between failures,Statistical physics,Monte Carlo method,Computer simulation,Simulation,Physical system,Electronic engineering,Bruit,Engineering,Electromigration,Log-normal distribution,Interconnection | Journal |
Volume | Issue | ISSN |
48 | 7 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Stefano Di Pascoli | 1 | 7 | 2.37 |
| Giuseppe Iannaccone | 2 | 152 | 24.49 |