Paper Info
Title
A large range and fine tuning configurable Bandgap reference dedicated to wafer-scale systems
Abstract
A compact configurable voltage reference in a 180 nm CMOS technology dedicated to a wafer-scale prototyping platform for electronic systems is described. The proposed topology is based on a PTAT current generator mixed with CTAT nMOS diode connected transistors to achieve temperature and power supply independency. This new Bandgap reference (BGR) uses a configurable unbalanced differential pair to achieve an output voltage that ranges from 1.33 to 3.04 V. This large voltage range can be fine tuned with a ~10 mV step for a total of 246 unique output values. Existing configurable BGRs either have a fine grain tuning over a very small range of outputs or a wide range of outputs with coarse tuning. The temperature dependency is less than 27 mV over 60°C with a power supply sensitivity of 17.8 mV/V. The proposed design achieves the best Figure Of Merit and is compared with other similar available implementations for a configurable BGR.
Year
DOI
Venue
2011
10.1109/ICECS.2011.6122205
Electronics, Circuits and Systems
Keywords
Field
DocType
CMOS integrated circuits,MOSFET,network topology,semiconductor diodes,wafer-scale integration,BGR,CMOS technology,CTAT nMOS diode connected transistor,PTAT current generator,compact configurable voltage reference,configurable unbalanced differential pair,electronic system,figure of merit,fine tuning configurable bandgap reference,power supply sensitivity,voltage 1.33 V to 3.04 V,wafer-scale prototyping platform
NMOS logic,Computer science,Voltage,Voltage reference,Electronic engineering,Control engineering,CMOS,Figure of merit,MOSFET,Transistor,Electrical engineering,Bandgap voltage reference
Conference
ISBN
Citations 
PageRank 
978-1-4577-1844-1
0
0.34
References 
Authors
0
4
Name
Order
Citations
PageRank
Nicolas Laflamme-Mayer111.36
Yves Blaquière22411.24
Mohamad Sawan3774172.87
Laflamme-Mayer, N.400.34