Name
Abstract | ||
|---|---|---|
A vertical N-channel 150-200 V FLYMOSFET concept has been applied on silicon: its P-buried layer introduced in the N~ epitaxial region, called 'P floating island', is the key factor for superior performance. A particular physical characterisation technique, scanning capacitance microscopy, is used on a power device to establish 2D and 3D island representation and to go beyond ID information given ... |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1049/iet-cds:20060371 | IET Circuits, Devices & Systems |
Keywords | Field | DocType |
power MOSFET | Spreading resistance profiling,Capacitance,Power MOSFET,Scanning capacitance microscopy,Electronic engineering,Breakdown voltage,MOSFET,Mathematics,Silicon,Epitaxy | Journal |
Volume | Issue | ISSN |
1 | 5 | 1751-858X |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yann Weber | 1 | 1 | 2.51 |
| J. Roig | 2 | 16 | 4.23 |
| Jean-Michel Reynes | 3 | 0 | 1.35 |
| F. Morancho | 4 | 1 | 2.51 |
| Evgueniy N. Stefanov | 5 | 0 | 0.34 |
| Monique Dilhan | 6 | 0 | 0.34 |
| GÉrard Sarrabayrouse | 7 | 11 | 3.02 |