Name
Abstract | ||
|---|---|---|
Due to strong requirement in term of capacitance voltage linearity, MIM capacitance stability during the whole operating lifetime of the product appears to be a key issue to warrant the reliability of this device. Using a constant current stress, two effects can be noticed on the evolution of the stressed C–V characteristics: a voltage shift to negative bias and a significant increase of the capacitance. Both phenomena have been demonstrated to be strongly correlated and to have the same origin: the trapped charges in oxide, which can generate new dipoles in the dielectric and, as a result, modulate the dielectric permittivity. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1016/S0026-2714(03)00177-X | Microelectronics Reliability |
Field | DocType | Volume |
Capacitance,Dielectric,Voltage,Linearity,Electronic engineering,Diffusion capacitance,Relative permittivity,Engineering,Differential capacitance,Dipole | Journal | 43 |
Issue | ISSN | Citations |
8 | 0026-2714 | 4 |
PageRank | References | Authors |
1.03 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| C. Besset | 1 | 4 | 1.36 |
| S. Bruyére | 2 | 12 | 6.64 |
| S. Blonkowski | 3 | 5 | 1.80 |
| S. Crémer | 4 | 6 | 2.11 |
| E. Vincent | 5 | 37 | 16.62 |