Title | ||
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Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits. |
Abstract | ||
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This paper presents a critical comparison of three different methods for the estimation of the thermal resistance (RTH) of GaAs pHEMTs: (i) a DC method, based on the use of drain current as a temperature sensitive parameter (TSP); (ii) a pulsed I–V method, based on the evaluation of IDS at different temperature levels, (iii) infrared thermography. |
Year | DOI | Venue |
---|---|---|
2012 | 10.1016/j.microrel.2012.06.132 | Microelectronics Reliability |
Field | DocType | Volume |
Thermography,Thermal,Electronic engineering,Extrapolation,Monolithic microwave integrated circuit,Engineering,Electronic circuit,Infrared,High-electron-mobility transistor,Thermal resistance | Journal | 52 |
Issue | ISSN | Citations |
9 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 6 |
Name | Order | Citations | PageRank |
---|---|---|---|
Isabella Rossetto | 1 | 3 | 4.22 |
Matteo Meneghini | 2 | 45 | 30.20 |
Tiziana Tomasi | 3 | 0 | 0.68 |
Dai Yufeng | 4 | 0 | 0.68 |
Gaudenzio Meneghesso | 5 | 67 | 38.27 |
Enrico Zanoni | 6 | 60 | 37.05 |