Title
Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits.
Abstract
This paper presents a critical comparison of three different methods for the estimation of the thermal resistance (RTH) of GaAs pHEMTs: (i) a DC method, based on the use of drain current as a temperature sensitive parameter (TSP); (ii) a pulsed I–V method, based on the evaluation of IDS at different temperature levels, (iii) infrared thermography.
Year
DOI
Venue
2012
10.1016/j.microrel.2012.06.132
Microelectronics Reliability
Field
DocType
Volume
Thermography,Thermal,Electronic engineering,Extrapolation,Monolithic microwave integrated circuit,Engineering,Electronic circuit,Infrared,High-electron-mobility transistor,Thermal resistance
Journal
52
Issue
ISSN
Citations 
9
0026-2714
0
PageRank 
References 
Authors
0.34
0
6
Name
Order
Citations
PageRank
Isabella Rossetto134.22
Matteo Meneghini24530.20
Tiziana Tomasi300.68
Dai Yufeng400.68
Gaudenzio Meneghesso56738.27
Enrico Zanoni66037.05