Isabella Rossetto - Citegraph

Author Info

Name	Affiliation	Papers
ISABELLA ROSSETTO	University of Padova, Department of Information Engineering, Via Gradenigo 6/B, 35131 Padova, Italy	12
Collaborators	Citations	PageRank
55	3	4.22
Referers	Referees	References
9	30	4

Publications (12 rows)

Collaborators (55 rows)

Referers (9 rows)

Referees (30 rows)

Title	Citations	PageRank	Year
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs.	0	0.34	2017
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.	0	0.34	2017
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.	0	0.34	2016
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate	1	0.39	2016
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure	0	0.34	2016
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs	0	0.34	2015
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs	2	0.46	2015
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs.	0	0.34	2014
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate.	0	0.34	2013
Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.	0	0.34	2013
Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits.	0	0.34	2012
ESD sensitivity of a GaAs MMIC microwave power amplifier.	0	0.34	2011

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