Title
Dynamic simulation of migration induced failure mechanism in integrated circuit interconnects.
Abstract
•Dynamic simulation of the diffusion paths in interconnects in the consideration of crystal grains show a possible void formation.•The distribution of different Crystal grains in the interconnects influence the lifetime.•The simulation of interconnects with the consideration of manufacturing process help to understand the failure mechanism.
Year
DOI
Venue
2013
10.1016/j.microrel.2013.07.097
Microelectronics Reliability
Field
DocType
Volume
Mass flux,Electronic engineering,Back end of line,Electronics,Engineering,Electromigration,Void (astronomy),Grain boundary,Integrated circuit,Dynamic simulation
Journal
53
Issue
ISSN
Citations 
9
0026-2714
0
PageRank 
References 
Authors
0.34
5
6
Name
Order
Citations
PageRank
Aymen Moujbani100.34
Jörg Kludt202.03
Kirsten Weide-Zaage33114.97
Markus Ackermann4223.63
Verena Hein512.46
Lutz Meinshausen683.47