Name
Title | ||
|---|---|---|
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs |
Abstract | ||
|---|---|---|
The effects of the substrate voltage are studied in advanced N-MOSFETs with a 3.2nm gate-oxide thickness used for logic applications. Results show that the electronic gate current originate at low voltage from tunneling contributions and from the first-induced second impact ionization mechanisms. The injection efficiency is found to be channel-length dependent through a large increase in the gate-current with the increase in the lateral field (vertical field) and the electron-electron scattering for low energy hot-carriers. Lifetime prediction techniques are compared showing a strong device lifetime reduction with the back bias at V-SB= V-DD independently of the extrapolating model which can be modeled by the measurement of the gate-current and the emission probability. (C) 2001 Elsevier Science Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2001 | 10.1016/S0026-2714(01)00206-2 | Microelectronics Reliability |
Field | DocType | Volume |
Substrate (chemistry),Voltage,Communication channel,Electronic engineering,Engineering,Optoelectronics | Journal | 41 |
Issue | ISSN | Citations |
9 | 0026-2714 | 3 |
PageRank | References | Authors |
1.19 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. Bravaix | 1 | 35 | 13.68 |
| D. Goguenheim | 2 | 10 | 6.40 |
| N. Revil | 3 | 35 | 12.25 |
| E. Vincent | 4 | 37 | 16.62 |