Title
A Built-in Self-Diagnosis and Repair Design With Fail Pattern Identification for Memories
Abstract
With the advent of deep-submicrometer VLSI technology, the capacity and performance of semiconductor memory chips is increasing drastically. This advantage also makes it harder to maintain good yield. Diagnostics and redundancy repair methodologies thus are getting more and more important for memories, including embedded ones that are popular in system chips. In this paper, we propose an efficient memory diagnosis and repair scheme based on fail-pattern identification. The proposed diagnosis scheme can distinguish among row, column, and word faults, and subsequently apply the Huffman compression method for fault syndrome compression. This approach reduces the amount of data that need to be transmitted from the chip under test to the automatic test equipment (ATE) without losing fault information. It also simplifies the analysis that has to be performed on the ATE. The proposed redundancy repair scheme is assisted by fail-pattern identification approach and a flexible redundancy structure. The area overhead for our built-in self-repair (BISR) design is reasonable. Our repair scheme uses less redundancy than other redundancy schemes under the same repair rate requirement. Experimental results show that the area overhead of the BISR design is only 4.1% for an 8 K × 64 memory and is in inverse proportion to the memory size.
Year
DOI
Venue
2011
10.1109/TVLSI.2010.2073489
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Keywords
Field
DocType
bisr design,yield enhancement,memory testing,integrated circuit testing,built-in self-repair (bisr),proposed redundancy repair scheme,fault syndrome compression,flexible redundancy structure,repair design,deep-submicrometer vlsi technology,memory repair,data compression,fail-pattern identification approach,fail pattern identification,automatic test equipment,built-in self test,storage management chips,fault diagnosis,ate,repair scheme,vlsi,integrated circuit design,efficient memory diagnosis,semiconductor memory chips,redundancy repair methodology,memory size,design-for-testability (dft),redundancy scheme,area overhead,built-in self-diagnosis,memory diagnostics,semiconductor memory,huffman compression method,proposed diagnosis scheme,repair rate requirement,built-in self-diagnosis-repair design,algorithm design,design for testability,redundancy,algorithm design and analysis
Design for testing,Semiconductor memory,Automatic test equipment,Computer science,Electronic engineering,Huffman coding,Redundancy (engineering),Data compression,Very-large-scale integration,Built-in self-test,Embedded system
Journal
Volume
Issue
ISSN
19
12
1063-8210
Citations 
PageRank 
References 
2
0.37
26
Authors
5
Name
Order
Citations
PageRank
Chin-Lung Su1968.05
Rei-Fu Huang216513.15
Wu, Cheng-Wen31843170.44
Kun-Lun Luo4242.83
Wen-Ching Wu5525.05