Name
Abstract | ||
|---|---|---|
This paper presents a simple electrical model of laser-induced currents in a single MOS transistor for different laser pulse durations. This model is validated by mixed-mode device simulations of a laser-induced fault in an SRAM cell for different laser pulse durations ranging from 100fs to 10ns. This model can be used for netlist level simulation of pulsed laser online testing in the context of radiation hardening, semi-invasive attacks, or more generally, hardware level fault injection techniques. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1109/IOLTS.2005.27 | IOLTS |
Keywords | Field | DocType |
different laser pulse duration,laser-induced current,different laser pulse,sram cell,laser testing,netlist level simulation,pulsed laser online testing,mixed-mode device simulation,simple electrical model,laser-induced fault,hardware level fault injection,different pulse durations,electrical modeling,semiconductor lasers,radiation hardening,failure analysis,photoconductivity | Netlist,Computer science,Electronic engineering,Pulse (signal processing),Laser,Ranging,MOSFET,Transistor,Radiation hardening,Fault injection | Conference |
ISBN | Citations | PageRank |
0-7695-2406-0 | 5 | 1.01 |
References | Authors | |
3 | 5 | |