Name
Title | ||
|---|---|---|
A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches |
Abstract | ||
|---|---|---|
This paper presents a 7T near-threshold SRAM with design techniques for improving cell stability and energy efficiency. The proposed write through virtual ground (WTVG) scheme decreases the period of write disturbance by 6.1×. A PVT tracking sensing scheme is presented to track variation and sense small RBL swing. The ultra-fine grain power gating switches are implemented to minimize the redundant leakage caused by the storage of garbage data. The leakage suppression of 52% is achieved after the initial power-up. A 16 kb SRAM test chip was fabricated in a 65nm CMOS technology and showed the minimum energy of 2.01 pJ at 0.4 V. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1109/ISCAS.2013.6572517 | ISCAS |
Keywords | Field | DocType |
ultra-fine grain power gating switches,near-threshold sram,garbage data,sram chips,low-power electronics,cell stability,wavelength 65 nm,cmos technology,voltage 0.4 v,energy 2.01 pj,redundant leakage,energy efficiency,write through virtual ground scheme,electric potential,computer architecture,low power electronics,thermal stability,sensors | Virtual ground,Leakage (electronics),Computer science,Efficient energy use,Electronic engineering,Static random-access memory,CMOS,Chip,Power gating,Low-power electronics | Conference |
ISSN | ISBN | Citations |
0271-4302 | 978-1-4673-5760-9 | 3 |
PageRank | References | Authors |
0.40 | 5 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yuan Lin Yeoh | 1 | 3 | 0.40 |
| Bo Wang | 2 | 3 | 0.40 |
| Xiangyao Yu | 3 | 270 | 16.17 |
| Tony T. Kim | 4 | 12 | 2.79 |