Name
Title | ||
|---|---|---|
On discrete random dopant modeling in drift-diffusion simulations: physical meaning of `atomistic' dopants |
Abstract | ||
|---|---|---|
We investigate the physics behind the `atomistic' dopant model widely used in drift-diffusion (DD) simulators for the study of statistical threshold voltage variations in ultra-small MOSFETs. It is found that the conventional dopant model, when extended to the extreme atomistic regime, becomes physically inconsistent with the concepts of electric potential presumed in DD device simulations. The split of the Coulomb potential between the long-range and short-range parts associated with discretized dopants is critical for the device simulations under the atomistic regime. A new dopant model to overcome such problems for 3-dimensional DD simulations is proposed by employing this idea. |
Year | DOI | Venue |
|---|---|---|
2002 | 10.1016/S0026-2714(01)00138-X | Microelectronics Reliability |
Keywords | Field | DocType |
3 dimensional,coulomb potential,threshold voltage | Statistical physics,Discretization,Dopant,Voltage,Electronic engineering,Electric potential,Engineering,Threshold model | Journal |
Volume | Issue | ISSN |
42 | 2 | 0026-2714 |
Citations | PageRank | References |
5 | 1.08 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Nobuyuki Sano | 1 | 6 | 1.87 |
| Kazuya Matsuzawa | 2 | 7 | 3.18 |
| Mikio Mukai | 3 | 5 | 1.08 |
| Noriaki Nakayama | 4 | 30 | 8.95 |