Name
Title | ||
|---|---|---|
Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED |
Abstract | ||
|---|---|---|
We studied the reliability of Organic Light-Emitting Diodes (OLEDs) featuring a NPD hole transport layer and Alq(3) electron transport layer, subjected to thermal and electrical stress. The main results can be summarized as follows: temperature alone (without bias) cannot induce device degradation at least up to 60 degrees C; during constant current stress at 120 mA/cm(2), temperature can strongly enhance the degradation rate, even though the temperature increases only by 40 degrees C; the degradation is more severe in the central part of the device where the self-heating is larger. (C) 2010 Elsevier Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1016/j.microrel.2010.07.114 | MICROELECTRONICS RELIABILITY |
Keywords | Field | DocType |
organic light emitting diode,transport layer,electron transport | Thermal,OLED,Diode,Optics,Chemistry,Electronic engineering,Transport layer,Stress (mechanics),Degradation (geology),Electron transport chain,Organic electronics,Optoelectronics | Journal |
Volume | Issue | ISSN |
50 | SP9-11 | 0026-2714 |
Citations | PageRank | References |
3 | 0.72 | 0 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. Cester | 1 | 17 | 8.40 |
| D. Bari | 2 | 10 | 3.47 |
| J. Framarin | 3 | 3 | 0.72 |
| N. Wrachien | 4 | 10 | 4.15 |
| G. Meneghesso | 5 | 52 | 22.83 |
| Shanhong Xia | 6 | 31 | 14.64 |
| V. Adamovich | 7 | 3 | 0.72 |
| J.J. Brown | 8 | 3 | 0.72 |