G. Meneghesso - Citegraph

Author Info

Name	Affiliation	Papers
G. MENEGHESSO	Dept. of Information Engineering, University of Padova, Via Gradenigo 6/B, 35131 Padova, Italy	26
Collaborators	Citations	PageRank
112	52	22.83
Referers	Referees	References
203	49	12

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100203

Publications (26 rows)

Collaborators (100 rows)

Referers (100 rows)

Referees (49 rows)

Title	Citations	PageRank	Year
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions.	0	0.34	2020
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT	0	0.34	2019
<tex>$\mu s$</tex>-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate	0	0.34	2019
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis	0	0.34	2019
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability	0	0.34	2019
An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches	5	0.99	2011
Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED	3	0.72	2010
Defect-related degradation of Deep-UV-LEDs	3	0.54	2010
Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches	3	0.79	2010
Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism	1	0.76	2010
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test	3	0.48	2009
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields	1	0.62	2008
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs	2	0.85	2007
Holding voltage investigation of advanced SCR-based protection structures for CMOS technology	2	0.53	2007
High temperature electro-optical degradation of InGaN/GaN HBLEDs	12	3.20	2007
High brightness GaN LEDs degradation during dc and pulsed stress	7	5.81	2006
Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors	0	0.34	2006
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues	2	1.42	2005
A novel fast and versatile temperature measurement system for LDMOS transistors	0	0.34	2005
Reliability of visible GaN LEDs in plastic package	6	1.37	2003
Optimization of ESD protection structures suitable for BCD6 smart power technology	0	0.34	2003
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology	0	0.34	2002
Backside Failure Analysis of GaAs ICs after ESD tests	0	0.34	2002
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs	1	0.56	2001
Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs.	0	0.34	2001
ESD protection structures for BCD5 smart power technologies.	1	0.48	2001