Name
Abstract | ||
|---|---|---|
Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effect on the amplifier’s RF performance. The SPICE Gummel–Poon (SGP) model parameters were extracted from the pre- and post-stress HBT data and used in Cadence SpectreRF simulation. The amplifier’s post-stress RF characteristics, such as the output power and power-added efficiency (PAE), remained almost unchanged even though the post-stress HBT’s DC current gain had dropped to 73.6% of its initial value. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1016/j.microrel.2008.06.009 | Microelectronics Reliability |
Keywords | Field | DocType |
power added efficiency,rf power amplifier,heterojunction bipolar transistor | Direct current,Spice,Electronic engineering,Bipolar junction transistor,Power electronics,Engineering,RF power amplifier,Heterojunction bipolar transistor,Heterojunction,Amplifier | Journal |
Volume | Issue | ISSN |
48 | 8 | 0026-2714 |
Citations | PageRank | References |
1 | 0.40 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Xiang Liu | 1 | 85 | 10.11 |
| Jiann S. Yuan | 2 | 2 | 1.86 |
| Juin J. Liou | 3 | 51 | 20.34 |