Title
280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13μm digital CMOS.
Year
DOI
Venue
2012
10.1109/ISSCC.2012.6176998
ISSCC
Keywords
Field
DocType
terahertz,silicon on insulator,amplifiers,millimeter wave,noise,imaging,cmos integrated circuits,schottky barrier,schottky diode,schottky diodes,detectors,chip,cmos technology,image sensor
Silicon on insulator,Baseband,Responsivity,Computer science,Diode,Electronic engineering,CMOS,Schottky diode,MOSFET,Electrical engineering,Optoelectronics,Detector
Conference
Citations 
PageRank 
References 
7
1.04
2
Authors
7
Name
Order
Citations
PageRank
Ruonan Han115227.20
Yaming Zhang2499.92
Young-Wan Kim3345.86
Dae Yeon Kim4325.11
Hisashi Shichijo5283.96
Ehsan Afshari632536.65
K. O. Kenneth7103.54