Paper Info
Title
Study On Threshold Voltage Control Of Tunnel Field-Effect Transistors Using V-T-Control Doping Region
Abstract
Although the Tunnel Field-Effect Transistor (TFET) is a promising device for ultra-low power CMOS technology due to the ability to reduce power supply voltage and very small off-current, there have been few reports on the control of V-T for TFETs. Unfortunately, the TFET needs a different technique to adjust V-T than the MOSFET by channel doping because most of TFETs are fabricated on SOI substrates. In this paper, we propose a technique to control V-T of the TFET by Putting an additional V-T-control doping region (VDR) between source and channel. We examine how much V-T is changed by doping concentration of VDR. The change of doping concentration modulates V-T because it changes the semiconductor work function difference, phi(s,channel)-phi(s,source). at off-state. Also, the effect of the size of VDR is investigated. The region can be confined to the silicon surface because most of tunneling occurs at the surface. At the same time, we study the optimum width of this region while considering the mobility degradation by doping. Finally, the effect of the SOI thickness on the VDR adjusted V-T of TFET is also investigated.
Year
DOI
Venue
2012
10.1587/transele.E95.C.820
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
DocType
Volume
Tunnel Field-Effect Transistors, threshold voltage, V-T-control doping region
Journal
E95C
Issue
ISSN
Citations 
5
1745-1353
0
PageRank 
References 
Authors
0.34
0
6
Name
Order
Citations
PageRank
Hyungjin Kim122114.63
Min-Chul Sun201.69
Hyun Woo Kim36312.99
Sang Wan Kim402.37
Garam Kim501.35
Byung-Gook Park6714.38