Abstract | ||
---|---|---|
The EOS/ESD sensitivity of the main circuit blocks of a complete GaAs multi-stage power amplifier for microwave applications was investigated under HBM, MM and TLP regimes. Hard breakdown failure modes were identified due to passive components failure. The high current injection state of active components was also analyzed. (C) 2011 Elsevier Ltd. All rights reserved. |
Year | DOI | Venue |
---|---|---|
2011 | 10.1016/j.microrel.2011.06.051 | Microelectronics Reliability |
Keywords | Field | DocType |
power amplifier,failure mode | Microwave power amplifiers,Direct-coupled amplifier,Electronic engineering,Active components,Microwave applications,Monolithic microwave integrated circuit,Engineering,Electronic component,Electrical engineering,Amplifier | Journal |
Volume | Issue | ISSN |
51 | 9 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
6 |
Name | Order | Citations | PageRank |
---|---|---|---|
Augusto Tazzoli | 1 | 6 | 3.19 |
Isabella Rossetto | 2 | 3 | 4.22 |
Enrico Zanoni | 3 | 60 | 37.05 |
Dai Yufeng | 4 | 0 | 0.68 |
Tiziana Tomasi | 5 | 0 | 0.68 |
Gaudenzio Meneghesso | 6 | 67 | 38.27 |