Name
Title | ||
|---|---|---|
A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor |
Abstract | ||
|---|---|---|
To verify three important circuit schemes suitable for DRAMs in mobile applications, a 1.8-V 128-Mb SDRAM was implemented with a 0.15-μm technology. To achieve an ideal 33% efficiency, the double boosting pump uses two capacitor's series connection at pumping phase, while they are precharged in parallel. The hybrid folded current sense amplifier together with a novel replica inverter connection im... |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1109/JSSC.2003.809514 | IEEE Journal of Solid-State Circuits |
Keywords | DocType | Volume |
Random access memory,Boosting,Temperature sensors,Circuit testing,Threshold voltage,Low voltage,SDRAM,Mobile computing,Multiaccess communication,Degradation | Journal | 38 |
Issue | ISSN | Citations |
4 | 0018-9200 | 11 |
PageRank | References | Authors |
1.42 | 2 | 9 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jae-yoon Sim | 1 | 508 | 83.58 |
| Hongil Yoon | 2 | 89 | 19.52 |
| Ki-Chul Chun | 3 | 11 | 1.42 |
| Hyun-Seok Lee | 4 | 248 | 25.22 |
| Sang-Pyo Hong | 5 | 11 | 1.42 |
| Kyu-Chan Lee | 6 | 60 | 16.51 |
| Jeihwan Yoo | 7 | 381 | 29.63 |
| Dong-il | 8 | 11 | 1.42 |
| Soo-In Cho | 9 | 142 | 36.44 |