Title
A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz
Abstract
This work presented the first broadband PWM-controlled RF SMPA driver reaching 8.04Vpp up to 3.6GHz using a 1.2V baseline 65nm CMOS technology. The CMOS driver can serve as a key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.
Year
DOI
Venue
2011
10.1109/ISSCC.2011.5746218
Solid-State Circuits Conference Digest of Technical Papers
Keywords
Field
DocType
CMOS analogue integrated circuits,driver circuits,power amplifiers,radiofrequency amplifiers,switched mode power supplies,CMOS pulse-width-controlled driver,CMOS technology,broadband PWM-controlled RF SMPA driver,digital CMOS circuitry,frequency 3.6 GHz,high-power transistor,multiband multimode transmitter,size 65 nm,switch-mode RF PA,voltage 1.2 V,voltage 8.04 V,wireless infrastructure system
Transmitter,LDMOS,Computer science,Pulse-width modulation,Electronic engineering,CMOS,Radio frequency,RF power amplifier,High voltage,Electrical engineering,Amplifier
Conference
ISSN
ISBN
Citations 
0193-6530
978-1-61284-303-2
3
PageRank 
References 
Authors
0.67
1
9