Name
Abstract | ||
|---|---|---|
Abstract: This paper presents a charge pump voltage multiplier for Flash memory programming. Its key feature is a low output resistance. As compared to conventional solutions, the charge pump proposed can either deliver an increased output current to drive the memory bit-lines during programming, or deliver the same amount of current with a decreased area occupation. The output resistance reduction is achieved by using boosting techniques in the phase driver. This approach reduces the time constant of the charge transfer between the pump stages ,thereby allowing the use of an adequately high clock frequency to control the pump operation. Simulation results showed the validity of the proposed approach. |
Year | DOI | Venue |
|---|---|---|
2001 | 10.1109/MTDT.2001.945236 | MTDT |
Keywords | Field | DocType |
output resistance reduction,resistance charge pump,charge transfer,low output resistance,flash memory programming,increased output,memory bit-lines,low output,pump operation,pump stage,area occupation,voltage,capacitors,diodes,circuits,charge pump,frequency,time constant,cmos technology,programming,electric resistance | Capacitor,Flash memory,Computer science,Voltage,Electronic engineering,CMOS,Charge pump,Voltage multiplier,Electronic circuit,Electrical engineering,Clock rate | Conference |
ISSN | Citations | PageRank |
1087-4852 | 1 | 0.36 |
References | Authors | |
4 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Osama Khouri | 1 | 41 | 14.44 |
| Stefano Gregori | 2 | 62 | 24.34 |
| Dario Soltesz | 3 | 1 | 0.36 |
| Guido Torelli | 4 | 240 | 64.39 |
| Rino Micheloni | 5 | 69 | 12.85 |