Title
NBTI-aware dual threshold voltage assignment for leakage power reduction
Abstract
Dual threshold voltage (dual-Vth) assignment is recognized as a useful technique to reduce the leakage power. However, as the process technology shrinks to the deep sub-micron regime, the negative bias temperature instability (NBTI) effect becomes a serious concern. The NBTI effect may cause the degradation of threshold voltage over a period of months or years. Since previous dual-Vth assignment techniques do not consider the NBTI effect, they often decrease the circuit lifetime. In this paper, we propose an NBTI-aware dual-Vth assignment algorithm. Our objective is not only to reduce the leakage power but also to maintain the lifetime of the circuit. By assigning independent candidate gates to high threshold voltage (HTV) simultaneously, in each benchmark circuit, our approach can achieve a better result with a smaller CPU time. Experimental data consistently show that our approach works well in practice.
Year
DOI
Venue
2012
10.1109/ISCAS.2012.6272033
ISCAS
Keywords
Field
DocType
leakage power reduction,dual threshold voltage assignment,integrated circuit design,nbti,negative bias temperature instability,logic gates,threshold voltage,degradation,algorithm design and analysis
Logic gate,Algorithm design,CPU time,Computer science,Leakage power,Electronic engineering,Integrated circuit design,Negative-bias temperature instability,Electrical engineering,Threshold voltage
Conference
ISSN
ISBN
Citations 
0271-4302
978-1-4673-0218-0
2
PageRank 
References 
Authors
0.39
6
4
Name
Order
Citations
PageRank
Wen-Pin Tu1214.32
Shih-Wei Wu220.72
Shih-Hsu Huang320338.89
Mely Chen Chi4446.78