Title
A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS
Abstract
A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g. base stations will be demonstrated. The LNA is designed for the 1.92-1.98GHz band and reaches a 0.7dB NF at 27°C and 1.1 at 65°C. The output IP3 is +40dBm at 27°C and +37dBm at 65°C while having input and output return loss better than 20dB. A bypass mode and variable attenuation is also provided to cope with large input signals. The two-die MMIC is packaged on a single laminate. The total solution consumes a maximum of 197mA from a 5V supply.
Year
DOI
Venue
2011
10.1109/ESSCIRC.2011.6044948
ESSCIRC
Keywords
Field
DocType
BiCMOS integrated circuits,Ge-Si alloys,UHF amplifiers,cellular radio,code division multiple access,low noise amplifiers,BiCMOS,OIP3 WCDMA LNA,SiGe:C,WCDMA cellular infrastructure application,current 197 mA,frequency 1.92 GHz to 1.98 GHz,silicon integrated LNA,temperature 27 C,temperature 65 C,two-die MMIC,voltage 5 V
Base station,BiCMOS,Return loss,Computer science,W-CDMA,Electronic engineering,Input/output,Monolithic microwave integrated circuit,Attenuation,Code division multiple access,Electrical engineering
Conference
ISSN
ISBN
Citations 
1930-8833 E-ISBN : 978-1-4577-0702-5
978-1-4577-0702-5
1
PageRank 
References 
Authors
0.41
2
8