Name
Title | ||
|---|---|---|
1200μm2 Physical Random-Number Generators Based on SiN MOSFET for Secure Smart-Card Application |
Abstract | ||
|---|---|---|
In this work, because of the high-amplitude random noise at high frequency from the SiN MOSFET, we need only a single amplifier and A/D converter, and the amplifier area is decreased. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1109/ISSCC.2008.4523233 | ISSCC |
Keywords | DocType | ISBN |
high-amplitude random noise,smart cards,random number generation,physical random-number generators,smart card,random noise,SiN MOSFET,A/D converter,AC-DC power convertors,silicon compounds,MOSFET circuits,SiN,amplifier area | Conference | 978-1-4244-2011-7 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Mari Matsumoto | 1 | 0 | 0.68 |
| Shinichi Yasuda | 2 | 21 | 6.57 |
| Ryuji Ohba | 3 | 1 | 0.78 |
| Kazutaka Ikegami | 4 | 43 | 6.79 |
| Tetsufumi Tanamoto | 5 | 24 | 6.40 |
| Shinobu Fujita | 6 | 180 | 22.11 |