Title
Erratic Effects of Irradiation in Floating Gate Memory Cells
Abstract
Like other silicon integrated circuit (IC) domains, the smart card market is very competitive and main actors are constantly trying to design the cheapest and safest circuits to ensure their consumers' satisfaction. These specificities lead smart cards ...
Year
DOI
Venue
2006
10.1109/IOLTS.2006.30
IOLTS
Keywords
Field
DocType
floating gate memory cells,erratic effects,smart card,safest circuit,smart card market,main actor,silicon integrated circuit,error correction,reliability
Computer science,Irradiation,Charge loss,Electronic engineering,Electrical engineering,High energy,Design Error,Ion
Conference
ISBN
Citations 
PageRank 
0-7695-2620-9
0
0.34
References 
Authors
1
4
Name
Order
Citations
PageRank
G. Cellere142.42
A. Paccagnella26110.38
A. Visconti332.06
M. Bonanomi400.34