Name
Abstract | ||
|---|---|---|
This paper deals with reliability of doped polycrystalline silicon layers used as high precision resistors in a BCD technology. In-situ doping and ion implantation methods are used. Resulting resistors an, characterized in order to determine resistance value dispersion on wafers and between neighboring resistors. The in-situ doped layers induce a better stability of the electrical characteristics during the process, a lower sheet resistance dispersion and a better electrical reliability related to electrical and thermal stresses than the ion implanted layers. (C) 2002 Elsevier Science Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2002 | 10.1016/S0026-2714(02)00151-8 | Microelectronics Reliability |
Field | DocType | Volume |
Engineering physics,Polysilicon depletion effect,Doping,Electronic engineering,Resistor,Engineering | Journal | 42 |
Issue | ISSN | Citations |
9 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 8 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| E. Carvou | 1 | 0 | 0.34 |
| F. Le Bihan | 2 | 0 | 0.34 |
| A.C. Salaün | 3 | 0 | 0.34 |
| R. Rogel | 4 | 0 | 0.68 |
| O. Bonnaud | 5 | 13 | 9.82 |
| Y. Rey-Tauriac | 6 | 2 | 2.65 |
| X. Gagnard | 7 | 3 | 1.11 |
| L. Roland | 8 | 0 | 0.34 |