Title
A 11 µW 0°C–160°C temperature sensor in 90 nm CMOS for adaptive thermal monitoring of VLSI circuits
Abstract
This paper reports design, efficiency and measurement results of the temperature sensor based on substrate bipolar transistors and a PTAT multiplier for adaptive thermal monitoring of deep-submicron VLSI circuits. The prototype temperature sensor with un-calibrated 3σ accuracy of 0.9°C within a 0°C-160°C temperature range has been fabricated in standard single poly, six metal 90nm CMOS, consumes only 11μW at 1V power supply and measures 0.05mm2.
Year
DOI
Venue
2012
10.1109/ISCAS.2012.6271672
Circuits and Systems
Keywords
Field
DocType
CMOS integrated circuits,VLSI,bipolar transistors,multiplying circuits,temperature measurement,temperature sensors,CMOS process,PTAT multiplier,adaptive thermal monitoring,deep-submicron VLSI circuits,power 11 muW,proportional-to-absolute temperature multiplier,size 90 nm,substrate bipolar transistors,temperature 0 degC to 160 degC,temperature sensor,uncalibrated 3σ accuracy,voltage 1 V
Atmospheric temperature range,Computer science,CMOS,Electronic engineering,Resistor,Bipolar junction transistor,Transistor,Integrated injection logic,Electrical engineering,Temperature measurement,Very-large-scale integration
Conference
ISSN
ISBN
Citations 
0271-4302
978-1-4673-0218-0
0
PageRank 
References 
Authors
0.34
8
5
Name
Order
Citations
PageRank
Amir Zjajo15720.08
Nick van der Meijs2307.49
René van Leuken3173.15
van der Meijs, N.400.34
van Leuken, R.5264.14