Name
Abstract | ||
|---|---|---|
We present here few examples of application of photomodulation techniques, e.g. photoreflectance and phototransmittance, as excellent methods for the investigation of semiconductor device structures. The discussion is narrowed down to low-dimensional structures used as an active part of the infrared optoelectronic devices: from new material (GaInAsN) double quantum wells, good candidate for 1.3 and 1.55 μm telecommunication lasers, through InGaSb/GaSb quantum wells pretending to the application in the infrared gas sensors, to 980 nm InGaAs/GaAs quantum dot laser pump source for EDFA amplifiers. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1016/S0026-2692(03)00024-7 | Microelectronics Journal |
Keywords | Field | DocType |
Photomodulation,Quantum wells,Quantum dots | Optical amplifier,Quantum point contact,Electro-absorption modulator,Quantum dot laser,Laser,Semiconductor device,Quantum well,Optoelectronics,Condensed matter physics,Quantum dot,Physics | Journal |
Volume | Issue | ISSN |
34 | 5 | 0026-2692 |
Citations | PageRank | References |
1 | 0.48 | 0 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| J. Misiewicz | 1 | 1 | 2.85 |
| G. Sęk | 2 | 1 | 0.82 |
| R. Kudrawiec | 3 | 1 | 2.85 |
| K. Ryczko | 4 | 1 | 0.82 |
| D. Gollub | 5 | 1 | 0.82 |
| J.P. Reithmaier | 6 | 1 | 0.82 |
| A. Forchel | 7 | 1 | 1.16 |