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J. MISIEWICZ
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Name
Affiliation
Papers
J. MISIEWICZ
Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
8
Collaborators
Citations
PageRank
30
1
2.85
Referers
Referees
References
5
0
0
Publications (8 rows)
Collaborators (30 rows)
Referers (5 rows)
Referees (0 rows)
Title
Citations
PageRank
Year
Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures
0
0.34
2009
Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates
0
0.34
2009
Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells
0
0.34
2009
Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions
0
0.34
2009
Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy
0
0.34
2005
Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells
0
0.34
2005
Influence of nitrogen on carrier localization in InGaAsN/GaAs single quantum wells
0
0.34
2003
Photomodulation spectroscopy applied to low-dimensional semiconductor structures
1
0.48
2003
1