Name
Title | ||
|---|---|---|
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor |
Abstract | ||
|---|---|---|
In the present work, the potential of hafnium silicate (HfxSiyO2) films as an alternative gate dielectric to SiO2 for future technology generations is demonstrated. Thermally stable HfxSiyO2 films are deposited from a single-source MOCVD precursor. I–V and C–V measurement data are presented and effects of post-deposition annealing on electrical properties are discussed. A 900°C O2-anneal shows best results in terms of leakage current characteristics and is, therefore, intensively investigated. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1016/j.microrel.2004.11.040 | Microelectronics Reliability |
Keywords | Field | DocType |
leakage current | Hafnium,Leakage (electronics),Electronic engineering,Gate dielectric,Metalorganic vapour phase epitaxy,Annealing (metallurgy),Engineering,Silicate | Journal |
Volume | Issue | ISSN |
45 | 5 | 0026-2714 |
Citations | PageRank | References |
3 | 0.68 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Lemberger | 1 | 4 | 1.75 |
| Albena Paskaleva | 2 | 5 | 2.12 |
| Stefan Zürcher | 3 | 4 | 1.07 |
| Anton J. Bauer | 4 | 5 | 2.16 |
| Lothar Frey | 5 | 14 | 6.73 |
| Heiner Ryssel | 6 | 5 | 2.16 |