Heiner Ryssel - Citegraph

Author Info

Name	Affiliation	Papers
HEINER RYSSEL	Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany	5
Collaborators	Citations	PageRank
15	5	2.16
Referers	Referees	References
19	26	9

Publications (5 rows)

Collaborators (15 rows)

Referers (19 rows)

Referees (26 rows)

Title	Citations	PageRank	Year
Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC.	0	0.34	2013
Investigation of the reliability of 4H–SiC MOS devices for high temperature applications	1	0.41	2011
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor	3	0.68	2005
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors	1	0.40	2003
Simulation of silicon semiconductor processing	0	0.34	1990

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