Name
Title | ||
|---|---|---|
Simulation Study On Scaling Limit Of Silicon Tunneling Field-Effect Transistor Under Tunneling-Predominance |
Abstract | ||
|---|---|---|
In this work, a strategic methodology to determine the channel length limit for the predominance of tunneling mechanism in the operation of a tunneling field-effect transistor (TFET) is suggested and validated for silicon (Si) nanowire TFET device. For quantitative analyses that can be graphitized as a function of channel length, a set of evaluating functions were defined and properly applied. Based on the suggested methodology, the upper limit for keeping the Si TFET under the tunneling-predominant operation turned out to be approximately 65 nm in a nanowire structure. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1587/elex.9.828 | IEICE ELECTRONICS EXPRESS |
Keywords | DocType | Volume |
methodology, channel length limit, tunneling field-effect transistor, silicon nanowire, evaluating function, tunneling-predominance | Journal | 9 |
Issue | ISSN | Citations |
9 | 1349-2543 | 0 |
PageRank | References | Authors |
0.34 | 0 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Seongjae Cho | 1 | 6 | 7.70 |
| Hyungjin Kim | 2 | 221 | 14.63 |
| Min-Chul Sun | 3 | 0 | 1.69 |
| In Man Kang | 4 | 0 | 2.70 |
| Byung-Gook Park | 5 | 7 | 14.38 |
| James S. Harris Jr. | 6 | 0 | 0.34 |